View CD4025BMS_80988.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

CD4000BMS, CD4001BMS CD4002BMS, CD4025BMS
November 1994
CMOS NOR Gate
Pinouts
CD4000BMS TOP VIEW
NC 1 NC 2 A3 B4 C5 H=A+B+C 6 VSS 7 14 VDD 13 F 12 E 11 D 10 K = D + E + F 9 L=G 8G NC = NO CONNECTION
Features
* High-Voltage Types (20V Rating) * Propagation Delay Time = 60ns (typ.) at CL = 50pF, VDD = 10V * Buffered Inputs and Outputs * Standard Symmetrical Output Characteristics * 100% Tested for Maximum Quiescent Current at 20V * 5V, 10V and 15V Parametric Ratings * Maximum Input Current of 1A at 18V Over Full Package-Temperature Range; 100nA at 18V and +25oC * Noise Margin (Over Full Package Temperature Range): - 1V at VDD = 5V - 2V at VDD = 10V - 2.5V at VDD = 15V * Meets All Requirements of JEDEC Tentative Standards No. 13B, "Standard Specifications for Description of "B" Series CMOS Device's
CD4001BMS TOP VIEW
A1 B2 J=A+B 3 K=C+D 4 C5 D6 VSS 7 14 VDD 13 H 12 G 11 M = G + H 10 L = E + F 9F 8E NC = NO CONNECTION
Description
CD4000BMS CD4001BMS CD4002BMS CD4025BMS - Dual 3 Plus Inverter - Quad 2 Input - Dual 4 Input - Triple 3 Input
CD4002BMS TOP VIEW
J=A+B+C+D 1 A2 B3 C4 D5 NC 6 VSS 7 14 VDD 13 K = E + F + G + H 12 H 11 G 10 F 9E 8 NC NC = NO CONNECTION
CD4000BMS, CD4001BMS, CD4002BMS, and CD4025BMS NOR gates provide the system designer with direct implementation of the NOR function and supplement the existing family of CMOS gates. All inputs and outputs are buffered. The CD4000BMS, CD4001BMS, CD4002BMS and the CD4025BMS is supplied in these 14 lead outline packages:
CD4000B CD4001B CD4002B CD4025B
Braze Seal DIP Frit Seal DIP Ceramic Flatpack
H4X H1B H3W
H4Q H1B H3W
H4Q H1B H3W
H4Q H1B H3W
A1 B2 D3 E4 F5 K=D+E+F 6 VSS 7
CD4025BMS TOP VIEW
14 VDD 13 G 12 H 11 I 10 L = G + H + I 9 J=A+B+C 8C NC = NO CONNECTION
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright (c) Intersil Corporation 1999
File Number
3289
7-649
CD4000BMS, CD4001BMS, CD4002BMS, CD4025BMS Functional Diagrams
J=A+B M=G+H
NC NC A B C H VSS
1
K=D+E+F
14
VDD F E D K L G
A
1 2 3
14 13 12
VDD
2
13
B
H
3
12
J
G
K=C+D
4
11
K
4 5 6
11
M
5
H=A+B+C
10 9
C
10 9 8
L=E+F
L
6
D
F
7
L=G
8
VSS
7
E
CD4000BMS
CD4001BMS
J A B C D NC VSS
1
J=A+B+C+D
14 13 12 11 10 9
K=E+F+G+H
VDD K H G F E NC
A
1
14
VDD
2 3 4 5 6 7
B
2
L=G+H+I
13
G
D
3
12
H
E
4
11
I
F
5
10 9
K=D+E+F
L J
K
6
8
VSS
7
J=A+B+C
8
C
CD4002BMS
CD4025BMS
7-650
Specifications CD4000BMS, CD4001BMS, CD4002BMS, CD4025BMS
Absolute Maximum Ratings
DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . -0.5V to +20V (Voltage Referenced to VSS Terminals) Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VDD +0.5V DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .10mA Operating Temperature Range . . . . . . . . . . . . . . . . -55oC to +125oC Package Types D, F, K, H Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265oC At Distance 1/16 1/32 Inch (1.59mm 0.79mm) from case for 10s Maximum
Reliability Information
Thermal Resistance . . . . . . . . . . . . . . . . ja jc Ceramic DIP and FRIT Package . . . . . 80oC/W 20oC/W Flatpack Package . . . . . . . . . . . . . . . . 70oC/W 20oC/W o Maximum Package Power Dissipation (PD) at +125 C For TA = -55oC to +100oC (Package Type D, F, K) . . . . . . 500mW For TA = +100oC to +125oC (Package Type D, F, K) . . . . . Derate Linearity at 12mW/oC to 200mW Device Dissipation per Output Transistor . . . . . . . . . . . . . . . 100mW For TA = Full Package Temperature Range (All Package Types) Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP A SUBGROUPS 1 2 VDD = 18V, VIN = VDD or GND Input Leakage IIL VIN = VDD or GND VDD = 20 3 1 2 VDD = 18V Input Leakage IIH VIN = VDD or GND VDD = 20 3 1 2 VDD = 18V Output Voltage Output Voltage Output Current (Sink) Output Current (Sink) Output Current (Sink) Output Current (Source) Output Current (Source) Output Current (Source) Output Current (Source) N Threshold Voltage P Threshold Voltage Functional VOL15 VOH15 IOL5 IOL10 IOL15 IOH5A IOH5B IOH10 IOH15 VNTH VPTH F VDD = 15V, No Load VDD = 15V, No Load (Note 3) VDD = 5V, VOUT = 0.4V VDD = 10V, VOUT = 0.5V VDD = 15V, VOUT = 1.5V VDD = 5V, VOUT = 4.6V VDD = 5V, VOUT = 2.5V VDD = 10V, VOUT = 9.5V VDD = 15V, VOUT = 13.5V VDD = 10V, ISS = -10A VSS = 0V, IDD = 10A VDD = 2.8V, VIN = VDD or GND VDD = 20V, VIN = VDD or GND VDD = 18V, VIN = VDD or GND VDD = 3V, VIN = VDD or GND Input Voltage Low (Note 2) Input Voltage High (Note 2) Input Voltage Low (Note 2) Input Voltage High (Note 2) VIL VIH VIL VIH VDD = 5V, VOH > 4.5V, VOL < 0.5V VDD = 5V, VOH > 4.5V, VOL < 0.5V VDD = 15V, VOH > 13.5V, VOL < 1.5V VDD = 15V, VOH > 13.5V, VOL < 1.5V 3 1, 2, 3 1, 2, 3 1 1 1 1 1 1 1 1 1 7 7 8A 8B 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 LIMITS TEMPERATURE +25
oC
PARAMETER Supply Current
SYMBOL IDD
CONDITIONS (NOTE 1) VDD = 20V, VIN = VDD or GND
MIN -100 -1000 -100 -
MAX 0.5 50 0.5 100 1000 100 50 -0.53 -1.8 -1.4 -3.5 -0.7 2.8
UNITS A A A nA nA nA nA nA nA mV V mA mA mA mA mA mA mA V V V
+125oC -55oC +25o C
+125oC -55oC +25oC +125oC -55oC +25oC, +125oC, -55oC
+25oC, +125oC, -55oC 14.95 +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +125oC -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC 3.5 11 0.53 1.4 3.5 -2.8 0.7
VOH > VOL < VDD/2 VDD/2
1.5 4 -
V V V V
NOTES: 1. All voltages referenced to device GND, 100% testing being implemented. 2. Go/No Go test with limits applied to inputs
3. For accuracy, voltage is measured differentially to VDD. Limit is 0.050V max.
7-651
Specifications CD4000BMS, CD4001BMS, CD4002BMS, CD4025BMS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP A SUBGROUPS TEMPERATURE 9 10, 11 VDD = 5V, VIN = VDD or GND 9 10, 11 +25oC +125oC, -55oC LIMITS MIN MAX 250 338 200 270 UNITS ns ns ns ns
PARAMETER Propagation Delay
SYMBOL TPHL TPLH TTHL TTLH
CONDITIONS (NOTE 1, 2) VDD = 5V, VIN = VDD or GND
Transition Time
+25oC +125oC, -55oC
NOTES: 1. CL = 50pF, RL = 200K, Input TR, TF < 20ns. 2. -55oC and +125oC limits guaranteed, 100% testing being implemented. TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Supply Current SYMBOL IDD CONDITIONS VDD = 5V, VIN = VDD or GND NOTES 1, 2 TEMPERATURE -55 C, +25 C +125 C VDD = 10V, VIN = VDD or GND 1, 2 -55oC, +25oC +125oC VDD = 15V, VIN = VDD or GND 1, 2 -55oC, +25oC +125oC Output Voltage Output Voltage Output Voltage Output Voltage Output Current (Sink) VOL VOL VOH VOH IOL5 VDD = 5V, No Load VDD = 10V, No Load VDD = 5V, No Load VDD = 10V, No Load VDD = 5V, VOUT = 0.4V 1, 2 1, 2 1, 2 1, 2 1, 2 +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +125oC -55oC Output Current (Sink) IOL10 VDD = 10V, VOUT = 0.5V 1, 2 +125 C -55oC Output Current (Sink) IOL15 VDD = 15V, VOUT = 1.5V 1, 2 +125oC -55oC Output Current (Source) IOH5A VDD = 5V, VOUT = 4.6V 1, 2 +125oC -55oC Output Current (Source) IOH5B VDD = 5V, VOUT = 2.5V 1, 2 +125oC -55oC Output Current (Source) IOH10 VDD = 10V, VOUT = 9.5V 1, 2 +125oC -55oC Output Current (Source) IOH15 VDD =15V, VOUT = 13.5V 1, 2 +125oC -55oC Input Voltage Low Input Voltage High Propagation Delay VIL VIH TPHL TPLH TTHL TTLH VDD = 10V, VOH > 9V, VOL < 1V VDD = 10V, VOH > 9V, VOL < 1V VDD = 10V VDD = 15V VDD = 10V VDD = 15V 1, 2 1, 2 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC +25oC +25oC +25oC 7 120 90 100 80 V ns ns ns ns
o o o o
MIN 4.95 9.95 0.36 0.64 0.9 1.6 2.4 4.2 -
MAX 0.25 7.5 0.5 1.5 0.5 3.0 50 50 -0.36 -0.64 -1.15 -2.0 -0.9 -1.6 -2.4 -4.2 3
UNITS A A A A A A mV mV V V mA mA mA mA mA mA mA mA mA mA mA mA mA mA V
Transition Time
7-652
Specifications CD4000BMS, CD4001BMS, CD4002BMS, CD4025BMS
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) LIMITS PARAMETER Input Capacitance NOTES: 1. All voltages referenced to device GND. 2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized on initial design release and upon design changes which would affect these characteristics. 3. CL = 50pF, RL = 200K, Input TR, TF < 20ns. TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Supply Current N Threshold Voltage N Threshold Voltage Delta P Threshold Voltage P Threshold Voltage Delta Functional SYMBOL IDD VNTH VNTH VPTH VPTH F CONDITIONS VDD = 20V, VIN = VDD or GND VDD = 10V, ISS = -10A VDD = 10V, ISS = -10A VSS = 0V, IDD = 10A VSS = 0V, IDD = 10A VDD = 18V, VIN = VDD or GND VDD = 3V, VIN = VDD or GND Propagation Delay Time TPHL TPLH VDD = 5V 1, 2, 3, 4 +25oC NOTES 1, 4 1, 4 1, 4 1, 4 1, 4 1 TEMPERATURE +25oC +25oC +25o C MIN -2.8 0.2 VOH > VDD/2 MAX 2.5 -0.2 1 2.8 1 VOL < VDD/2 1.35 x +25oC Limit UNITS A V V V V V SYMBOL CIN CONDITIONS Any Input NOTES 1, 2 TEMPERATURE +25oC MIN MAX 7.5 UNITS pF
+25oC +25oC +25oC
ns
NOTES: 1. All voltages referenced to device GND. 2. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
3. See Table 2 for +25oC limit. 4. Read and Record
TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +25OC PARAMETER Supply Current - SSI Output Current (Sink) Output Current (Source) SYMBOL IDD IOL5 IOH5A 0.1A 20% x Pre-Test Reading 20% x Pre-Test Reading DELTA LIMIT
TABLE 6. APPLICABLE SUBGROUPS CONFORMANCE GROUP Initial Test (Pre Burn-In) Interim Test 1 (Post Burn-In) Interim Test 2 (Post Burn-In) PDA (Note 1) Interim Test 3 (Post Burn-In) PDA (Note 1) Final Test Group A Group B Subgroup B-5 Subgroup B-6 Group D MIL-STD-883 METHOD 100% 5004 100% 5004 100% 5004 100% 5004 100% 5004 100% 5004 100% 5004 Sample 5005 Sample 5005 Sample 5005 Sample 5005 GROUP A SUBGROUPS 1, 7, 9 1, 7, 9 1, 7, 9 1, 7, 9, Deltas 1, 7, 9 1, 7, 9, Deltas 2, 3, 8A, 8B, 10, 11 1, 2, 3, 7, 8A, 8B, 9, 10, 11 1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas 1, 7, 9 1, 2, 3, 8A, 8B, 9 Subgroups 1, 2 3 Subgroups 1, 2, 3, 9, 10, 11 IDD, IOL5, IOH5A READ AND RECORD IDD, IOL5 IDD, IOL5 IDD, IOL5
NOTE: 1. 5% Parameteric, 3% Functional; Cumulative for Static 1 and 2.
7-653
Specifications CD4000BMS, CD4001BMS, CD4002BMS, CD4025BMS
TABLE 7. TOTAL DOSE IRRADIATION MIL-STD-883 METHOD 5005 TEST PRE-IRRAD 1, 7, 9 POST-IRRAD Table 4 READ AND RECORD PRE-IRRAD 1, 9 POST-IRRAD Table 4
CONFORMANCE GROUPS Group E Subgroup 2
TABLE 8. BURN-IN AND IRRADIATION TEST CONNECTIONS OSCILLATOR FUNCTION Static Burn-In 1 Note 1 Static Burn-In 2 Note 1 Dynamic BurnIn Note 1 Irradiation Note 2 Static Burn-In 1 Note 1 Static Burn-In 2 Note 1 Dynamic BurnIn Note 1 Irradiation Note 2 Static Burn-In 1 Note 1 Static Burn-In 2 Note 1 Dynamic BurnIn Note 1 Irradiation Note 2 Static Burn-In 1 Note 1 Static Burn-In 2 Note 1 Dynamic BurnIn Note 1 Irradiation Note 2 NOTE: 1. Each pin except VDD and GND will have a series resistor of 10K 5%, VDD = 18V 0.5V 2. Each pin except VDD and GND will have a series resistor of 47K 5%; Group E, Subgroup 2, sample size is 4 dice/wafer, 0 failures, VDD = 10V 0.5V OPEN 1, 2, 6, 9, 10 1, 2, 6, 9, 10 1, 2 1, 2, 6, 9, 10 GROUND 3 - 5, 7, 8, 11 - 13 7 7 7 VDD 14 3 - 5, 8, 11 - 14 14 3 - 5, 8, 11 - 14 6, 9, 10 3 - 5, 8, 11 - 13 9V -0.5V 50kHz 25kHz PART NUMBER CD4000BMS
PART NUMBER CD4001BMS 3, 4, 10, 11 3, 4, 10, 11 3, 4, 10, 11 1, 2, 5 - 9, 12, 13 7 7 7 14 1, 2, 5, 6, 8, 9, 12 - 14 14 1, 2, 5, 6, 8, 9, 12 - 14 14 2 - 5, 9 - 12, 14 14 2 - 5, 9 - 12, 14 1, 13 2 - 5, 9 - 12 3, 4, 10, 11 1, 2, 5, 6, 8, 9, 12, 13
PART NUMBER CD4002BMS 1, 6, 8, 13 1, 6, 8, 13 6, 8 1, 6, 8, 13 2 - 5, 7, 9 - 12 7 7 7
PART NUMBER CD4025BMS 6, 9, 10 6, 9, 10 6, 9, 10 1 - 5, 7, 8, 11 - 13 7 7 7 14 1 - 5, 8, 11 - 14 14 1 - 5, 8, 11 - 14 6, 9, 10 1 - 5, 8, 11 - 13
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
654
Specifications CD4000BMS, CD4001BMS, CD4002BMS, CD4025BMS Schematic and Logic Diagrams
14 p p VDD p p p n 5* n (12) 3* (11) 4* (13) n n p n INVERTER AND 1 OF 2 GATES (NUMBERS IN PARENTHESES ARE TERMINAL NUMBERS FOR SECOND GATE) 1* (8, 6, 13) n n p n 2* 7 5(12) 6 (10) 4(13) LOGIC DIAGRAM 1 OF 4 GATES (NUMBERS IN PARANTHESES ARE TERMINAL NUMBERS FOR OTHER GATES) 1(8, 6,13) 3 8 9 2(9, 5, 12) (10, 4, 11) LOGIC DIAGRAM VSS n (9, 5, 12) 7 3(11) VSS n (10, 4, 11) p n n 8* n n n p 14 p VDD p p 3 VSS 6(10) p p p 9 *ALL INPUTS ARE PROTECTED BY CMOS PROTECTION NETWORK VDD
CD4000BMS
CD4001BMS
14 p p
VDD p p p 14 1 n n p (13) p n 3* n n (1, 11) 4* n (2, 12) 5* (8, 13) n n p n p n n p p p 6 (9, 10) VDD
p 2* n (12) 3* (11) 4* (10) 5* (9) n n p n p p n
1 OF 2 GATES (NUMBERS IN PARENTHESES ARE TERMINAL 7 NUMBERS FOR SECOND GATE) 2(12)
VSS 1 OF 3 GATES (NUMBERS IN PARENTHESES ARE TERMINAL NUMBERS FOR OTHER GATES) 7 VSS
3(11)
3(1, 11) 1 (13) 4(2, 12) LOGIC DIAGRAM 6 (9, 10) LOGIC DIAGRAM 5(8, 13)
4(10)
5(9)
CD4002BMS
CD4025BMS
7-655
CD4000BMS, CD4001BMS, CD4002BMS, CD4025BMS Typical Performance Characteristics
POWER DISSIPATION PER GATE (PD) (W) AMBIENT TEMPERATURE (TA) = +25oC 105
8 6 4 2
AMBIENT TEMPERATURE (TA) = +25oC SUPPLY VOLTAGE (VDD) = 15V 10V 10V 5V
OUTPUT VOLTAGE (VO) (V)
SUPPLY VOLTAGE (VDD) = 15V 15
104
8 6 4
10V 10
103
2 8 6 4 2
5V 5
102
8 6 4 2
CL = 50pF CL = 15pF
10
2 4 68 2 4 68 2 4 68 2 4 68
0
5
10 15 INPUT VOLTAGE (VI) (V)
20
25
1
103 10 102 INPUT FREQUENCY (fI) (kHz)
104
FIGURE 1. TYPICAL VOLTAGE TRANSFER CHARACTERISTICS
AMBIENT TEMPERATURE (TA) = +25oC
FIGURE 2. TYPICAL POWER DISSIPATION vs FREQUENCY
OUTPUT LOW (SINK) CURRENT (IOL) (mA)
30 GATE-TO-SOURCE VOLTAGE (VGS) = 15V 25 20 15 10 5 5V 10V
OUTPUT LOW (SINK) CURRENT (IOL) (mA)
AMBIENT TEMPERATURE (TA) = +25oC
15 12.5 10 7.5 5 2.5 10V GATE-TO-SOURCE VOLTAGE (VGS) = 15V
5V 0 5 10 15
0
5
10
15
DRAIN-TO-SOURCE VOLTAGE (VDS) (V)
DRAIN-TO-SOURCE VOLTAGE (VDS) (V)
FIGURE 3. TYPICAL OUTPUT LOW (SINK) CURRENT CHARACTERISTICS
DRAIN-TO-SOURCE VOLTAGE (VDS) (V) -15 -10 -5 0 OUTPUT HIGH (SINK) CURRENT (IOH) (mA) AMBIENT TEMPERATURE (TA) = +25oC GATE-TO-SOURCE VOLTAGE (VGS) = -5V -5 -10 -15 -20 -25 -30
FIGURE 4. MINIMUM OUTPUT LOW (SINK) CURRENT CHARACTERISTICS
DRAIN-TO-SOURCE VOLTAGE (VDS) (V) -15 -10 +25oC -5 0 OUTPUT HIGH (SINK) CURRENT (IOH) (mA)
AMBIENT TEMPERATURE (TA) =
GATE-TO-SOURCE VOLTAGE (VGS) = -5V -5
-10V
-10V
-10
-15V
-15V
-15
FIGURE 5. TYPICAL OUTPUT HIGH (SOURCE) CURRENT CHARACTERISTICS
FIGURE 6. MINIMUM OUTPUT HIGH (SOURCE) CURRENT CHARACTERISTICS
7-656
CD4000BMS, CD4001BMS, CD4002BMS, CD4025BMS Typical Performance Characteristics (Continued)
AMBIENT TEMPERATURE (TA) = +25oC PROPAGATION DELAY TIME PER GATE (tPHL, tPLH) (ns) TRANSITION TIME (tTHL, tTLH) (ns) 200 175 150 125 100 10V 75 50 25 0 10 15V SUPPLY VOLTAGE (VDD) = 5V AMBIENT TEMPERATURE (TA) = +25oC
200 SUPPLY VOLTAGE (VDD) = 5V 150
100
10V 15V
50
0
20
40 60 80 100 LOAD CAPACITANCE (CL) (pF)
20
30
40
50
60
70
80
90
100
LOAD CAPACITANCE (CL) (pF)
FIGURE 7. TYPICAL TRANSITION TIME vs LOAD CAPACITANCE
FIGURE 8. TYPICAL PROPAGATION DELAY TIME vs LOAD CAPACITANCE
Chip Dimensions and Pad Layouts
CD4000BMS
CD4001BMS
CD4002BMS
CD4025BMS
Dimensions in parentheses are in millimeters and are derived from the basic inch dimensions as indicated. Grid graduations are in mils (10-3 inch)
7-657

▲Up To Search▲

Price & Availability of CD4025BMS

	To Download CD4025BMS Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .